IC design, also known as integrated circuit design, has high precision in nano process technology, and the higher the accuracy, the more advanced the production process. When more transistors are integrated into the processor, the chip can achieve more functions, which directly reduces the production cost of the processor. But as the process nodes in integrated circuits become smaller, critical dimension measurement also faces enormous challenges. It is extremely important to measure and analyze geometric morphology information such as nanostructure period, line width, line height, sidewall angle, and roughness.
Solution:
By using the Mueller matrix ellipsometry measurement, 16 sets of polarization information were obtained, and more accurate ellipsometry parameters (PSI: amplitude ratio, △: phase difference) were obtained. Hundreds of built-in optical models were used for fitting, and then geometric morphology information such as nanostructure period, line width, line height, sidewall angle, and roughness were measured and analyzed.
Establish optical model
Polarization element information
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