PLASMA source |
RF |
||
Power |
ICP |
_ |
|
BIAS |
1000W(option) |
||
Applicable scope |
4~8 inch |
||
Single processing slice count |
1 |
||
Appearance dimensions |
850mmx900mmx1850mm |
||
System control |
PLC |
||
Automation level |
Manual |
Hardware Capability |
||
Uptime/Available time |
≧95% |
|
Mean time to clean (MTTC) |
≦6 hours |
|
Mean time to repair(MTTR) |
≦4 hours |
|
Mean time between failures(MTBF) |
≧350 hours |
|
Mean time between assistant(MTBA) |
≧24 hours |
|
Mean wafer between broken(MWBB) |
≦1 in 10,000 wafers |
|
Heating plate control |
50-250° |
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