Inductive Coupling Plasma Etching System ( ICP ) Semiconductor equipment , China Inductive Coupling Plasma Etching System ( ICP ) Semiconductor equipment Manufacturers, Suppliers, Factory

Product Description

Inductive coupling plasma etching (icp) system

Inductively coupled reactive ion etching technology is a type of RIE. This technology achieves decoupling of plasma ion density and ion energy by independently controlling ion flux, thereby improving the control accuracy and flexibility of the etching process.

The high-density inductively coupled reactive ion etching (ICP-RIE) series products are based on inductively coupled plasma technology and are aimed at fine etching and compound semiconductor etching needs. It has excellent process stability and process repeatability, and is suitable for applications in silicon semiconductors, optoelectronics, information and communications, power devices, and microwave devices.

Inductive Coupling Plasma Etching System ( ICP ) Semiconductor equipment details

Inductive Coupling Plasma Etching System ( ICP ) Semiconductor equipment supplier

Inductive Coupling Plasma Etching System ( ICP ) Semiconductor equipment factory

Applicable Materials:

1. Silicon-based materials: silicon (Si), silicon dioxide (SiO2), silicon nitride (SiNx), silicon carbide (SiC)...

2. III-V materials: indium phosphide (InP), gallium arsenide (GaAs), gallium nitride (GaN)...

3. II-VI materials: cadmium telluride (CdTe)...

4. Magnetic materials/alloy materials

5. Metal materials: aluminum (Al), gold (Au), tungsten (W), titanium (Ti), tantalum (Ta)...

6. Organic materials: photoresist (PR), organic polymer (PMMA/HDMS), organic thin film...

7. Ferroelectric/photoelectric materials: lithium niobate (LiNbO3)...

8. Dielectric materials: sapphire (Al2O3), quartz...

Related applications:

1. Grating etching: used for 3D display, micro-optical devices, optoelectronics, etc.;

2. Compound semiconductor etching: used for LED, laser, optical communication, etc.;

3. Patterned sapphire substrate (PSS);

4. Lithium niobate (LiNO3) etching: detectors, optoelectronics;

Process Result

Quartz / silicon / grating etching

Using BR mask to etch quartz or silicon materials, the grating array pattern has the thinnest line up to 300nm and the sidewall steepness of the pattern is close to > 89° , which can be applied to 3D display, micro optical devices, optoelectronic communication, etc

Compound / semiconductor etching

Accurate control of sample surface temperature can well control the etching morphology of GaN based, GaAs, InP and metal materials. lt is suitable for blue lED devices, lasers, optical communication and other applications.

Inductive Coupling Plasma Etching System ( ICP ) Semiconductor equipment manufacture

Silicon-based material etching

it is suitable for etching silicon based materials such as Si, SiO2, and SiNx. lt can realize silicon line etching above 50nm and silicon deep hole etching below 100um

Specification

Project configuration and machine structure diagram

Item	MD150S-ICP	MD200S-ICP	MD150CS-ICP	MD200CS-ICP	MD300C-ICP
Product size	≤6 inches	≤8 inches	≤6 inches	≤8 inches	Custom≥12inches
SRF Power source	0~1000W/2000W/3000W/5000WAdjustable,automatic matching\,13.56MHz/27MHz
BRF Power source	0~300W/0~500W/0~1000WAdjustable, automatic matching,2MHz/13.56MHz
Molecular pump	Non corrosive : 600 /1300 (L/s)/Custom			Anti-corrosion:600 /1300 (L./s)/Custom		600/1300(L/s) /Custom
Foreline pump	Mechanical pump / dry pump			Anti corrosion dry pump		Mechanical pump / dry pump
Pre pumping pump	Mechanical pump / dry pump			Mechanical pump / dry pump
Process pressure	Uncontrolled pressure/0-0.1/1/10Torr controlled pressure
Gas type	H2/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/NH3/C2F6/Custom (Up to 12 channels, no corrosive & toxic gas)			H2/CH4/O2/N2/Ar/SF6/CF4/CHF3/ C4F8/NF3/NH3/C2F6/Cl2/BCl3/HBr/ Custom(Up to 12 channels)
Gas range	0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/1000sccm/Custom
LoadLock	Yes/No			Yes
Sample tem control	10°C~Roomtem/ -30°C~150°C /Custom			-30°C~200°C/Custom
Back helium cooling	Yes/No			Yes
Process cavity lining	Yes/No			Yes
Cavity wall tem control	No/Room tem-60/120°C			Room tem~60/120°C
Control System	Auto/custom
Etching material	Silicon-base: Si/SiO2/ SiNx/ SiC..... Organic materials:PR/Organic film......			Silicon-base: Si/SiO2/SiNx/SiC III-V: InP/GaAs/GaN...... IV-IV: SiC II-VI: CdTe...... Magnetic material / alloy material Metallic materials: Ni/Cr/Al/Cu/Au... Organic materials: PR/Organic film...... Silicon deep etching

Packing & Delivery

Company Profile

We have 16 years of experience in equipment sales. We can provide you with One-stop Semiconductor Front-end and Back end Package Line equipments professional solution from China.

Home

About Us

MH Equipment

Solution

Oversea Users

Video

Contact Us