ICP Dry Plasma Photoresist Stripper
The ICP dry plasma photoresist stripper is primarily used for polymer removal, ashing, descumming, post-ion implantation photoresist removal, and the cleaning of surface residues. The MDST3100 chamber accommodates 4- to 8-inch samples with a single-wafer processing capacity, while the MDST3200 chamber accommodates 4- to 8-inch samples with a capacity of two wafers per batch.
The appearance of the equipment is subject to continuous upgrades and adjustments; the actual shipped product shall prevail.
Ashing
Polymer removal
DESCUM
Dry cleaning of hard mask layer
Removal of photoresist after ion implantation
Surface residue removal
Photoresist removal in BAW/SAW process
Dry cleaning of anti-reflective graphic film layer
Surface cleaning after etching
Advantage:
High degree of plasma ionization and decomposition
After plasma treatment, the reproducibility is high
Dry etching, no pollution source
Control pressure and temperature through butterfly valves
Can maintain plasma at high pressure
Separation of High Voltage Source and Ion Generator
Microwave junction and magnetic circuit are compatible
Can meet customer requirements
Low temperature during processing
Fast response speed and short response time
Model |
MDST3100 |
MDST3200 |
|
PLASMA Source |
RF |
RF |
|
Power |
ICP |
1000W
|
1000W
|
BIAS |
NA |
NA |
|
Scope of Application |
4-8 inch |
4-8 inch |
|
Number of wafers processed in a single operation |
1 |
2 |
|
Overall Dimensions |
1300x1190x1847mm |
1300x1650x1850mm |
|
System Control |
Industrial control system |
||
degree of automation |
Automatic |
||
Actual Photos of Equipment：
Guangzhou Minder-Hightech Co.,Ltd.
Copyright © Guangzhou Minder-Hightech Co.,Ltd. All Rights Reserved
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