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Home> PVD CVD ALD RIE ICP EBEAM
  • CVD Equipment for Graphene and Carbon Nanotube Materials
  • CVD Equipment for Graphene and Carbon Nanotube Materials
  • CVD Equipment for Graphene and Carbon Nanotube Materials
  • CVD Equipment for Graphene and Carbon Nanotube Materials

CVD Equipment for Graphene and Carbon Nanotube Materials

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Product Description

CVD equipment for graphene and carbon nanotube materials

The equipment is mainly used for the process coating of graphene and nano materials; Diffusion, oxidation and annealing of polycrystalline silicon and silicon carbide.
CVD Equipment for Graphene and Carbon Nanotube Materials / Semiconductor equipment details
Specification
structural style
Horizontal, single-tube or multi-tube system automatic control
Adapt to wafer size
2-8″
Wafer delivery and retrieval method
Automatic cantilever quartz push-pull boat, combined with manual chip taking and releasing.
maximum temperature
1050℃
working temperature
400 ℃~850 ℃ continuously adjustable
Single-point temperature stability
400℃~850℃≤±0.5℃/24h
System limit vacuum
Better than 1Pa
pumping speed
Pumping time to limit vacuum ＜ 15Min
Working pressure range
5Pa to 1 × 105Pa continuously adjustable
Power supply
3 phase 5-wire 380V±10%，50Hz
cooling water
2~4Kgf/cm²，8L/min;
Packing & Delivery
CVD Equipment for Graphene and Carbon Nanotube Materials / Semiconductor equipment factory
CVD Equipment for Graphene and Carbon Nanotube Materials / Semiconductor equipment details

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