Batch Wafer Tube Type Photoresist Stripper / Wafer Ashing System

Batch Wafer RF Photoresist Stripping Equipment

The appearance of the equipment is subject to continuous upgrades and adjustments; the actual shipped product shall prevail.

The MDST-3300 is a batch-processing, wafer-cassette-based microwave ashing system designed for applications such as photoresist removal, descumming, wafer cleaning, post-wet-process residue removal, wafer surface residue cleaning, and post-development residue removal. Freely moving electrons generate plasma that acts upon the photoresist on the wafer surfaces held within the quartz cassette inside the chamber. A continuous, high-density plasma is generated by applying 13.56 MHz microwave energy to the vacuum chamber walls. The chamber accommodates quartz cassettes for 4- to 8-inch wafers.

The MDST-2300 delivers rapid, damage-free plasma cleaning. The system achieves this cleaning effect through chemical reactions between activated radicals and the photoresist on the wafer surface.

Operating Principle:

An electric field is applied to the process gas to ionize it into plasma. The "active" components of the plasma include ions, electrons, atoms, free radicals, excited-state species (metastable states), and photons. Plasma treatment utilizes the properties of these active components to induce physical and chemical reactions—such as oxidation, reduction, bond cleavage, cross-linking, and polymerization—thereby altering the sample's surface characteristics. This process optimizes surface performance and achieves objectives such as cleaning, surface modification, and residue removal.

Advantages:

1.     Flexible product-holding fixtures accommodate irregularly shaped wafers;

2.     Low-temperature plasma prevents thermal damage to wafers;

3.     Electrically neutral plasma avoids electrical damage to wafers;

4.     High-efficiency, uniform plasma output ensures effective photoresist removal;

5.     High degree of plasma ionization and dissociation;

6.     Dry etching process eliminates sources of contamination;

7.     Pressure and temperature controlled via butterfly valve;

8.     Capable of maintaining plasma at high gas pressures;

9.     High-voltage power source separated from the ion generator;

10.   Compatible with microwave coupling and magnetic circuit configurations.

Product Structure:

The plasma surface treatment system mainly includes three parts: vacuum chamber and vacuum system, radio frequency generator, and control system.

(A) Vacuum chamber and vacuum generation system:

The vacuum chamber is fixed inside the cabinet frame, with detachable doors on both sides, making maintenance of the internal vacuum chamber and vacuum system extremely convenient. The vacuum generation system mainly consists of corrugated tubes, KF joints, and vacuum pumps, with the core component being the vacuum pump (vacuum pump group).

(B) RF generator:

The RF generator is equipped with a 1000W power supply to generate RF, and microwave energy is fed into the plasma quartz chamber through a matching device to form plasma.

(C) Control system:

This system uses industrial display screens, PC industrial control systems, and Chinese interface design. Process control of equipment: vacuum pump starts ->baffle valve opens ->set vacuum degree is reached ->process gas is introduced ->RF source generates RF ->RF energy is fed into the chamber ->plasma is formed in the chamber ->working time until vacuum is broken ->work is completed. The equipment is available in two modes: automatic and manual.

Product Specifications: