Electrical heating |
Chamber (Single cavity) |
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N/A |
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Lower electrode type |
242mm |
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Process temperature range |
-20-100°C |
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Plasma source |
600W-1000W |
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Process pressure gauge size |
100mtorr |
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Vacuum system |
Molecular pump units, dry pump systems, process chamber |
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The number of etching chambers |
Single cavity |
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Clamps |
Type |
Size/mm |
Material |
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N/A |
8、6、4、3、2 |
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End point detector |
Option |
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Inductively coupled plasma |
Option |
Etching material |
Si、Sio, Sin,Sau,Pt,Al |
Etching rate |
>20nm/min (Si02 material) The rates of different materials are not the same |
Distributed control |
>85° |
Loading method |
Open loading |
Gas pipeline controlled by MFC |
Six gas tanks are available |
Helium backside cooling option |
YES |
Human-machine interface |
Touchscreen operation |
Operation mode |
Fully automatic mode, non-fully automatic mode |
Selection and configuration of automated devices |
You can choose either imported or domestic parts |
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